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National Repository of Grey Literature 2 records found  Search took 0.00 seconds. 
2D and 3D analysis of semiconductor devices by SIMS
 Vařeka, Karel ; Šamořil, Tomáš (referee) ; Bábor, Petr (advisor)
The chemical analysis of semiconductor structures using the SIMS method is the main part of this bachelor thesis. It allows the user to make a depth profiling and a creation of 2D or 3D material images. During the analysis of the chip from the TIGBT semiconductor, there is a sputtering of a heterogeneous structure in the material with different sputtering rates. It is convenient to make a cut through the material using a focused ion beam to create a profile, which grants the user to perform a tomographic measurement. This new surface enables a chemical analysis of a depth profile of semiconductor structures without the need for sputtering beam in dynamic SIMS mode. By reconstructing individual two-dimensional images, it is possible to assemble a three-dimensional pattern of the analysed sample area. Also, the preparation and removal of the lamella from the TIGBT chip were accomplished and analysed via a detector of transmission electrons.
Detailed record
2D and 3D analysis of semiconductor devices by SIMS
 Vařeka, Karel ; Šamořil, Tomáš (referee) ; Bábor, Petr (advisor)
The chemical analysis of semiconductor structures using the SIMS method is the main part of this bachelor thesis. It allows the user to make a depth profiling and a creation of 2D or 3D material images. During the analysis of the chip from the TIGBT semiconductor, there is a sputtering of a heterogeneous structure in the material with different sputtering rates. It is convenient to make a cut through the material using a focused ion beam to create a profile, which grants the user to perform a tomographic measurement. This new surface enables a chemical analysis of a depth profile of semiconductor structures without the need for sputtering beam in dynamic SIMS mode. By reconstructing individual two-dimensional images, it is possible to assemble a three-dimensional pattern of the analysed sample area. Also, the preparation and removal of the lamella from the TIGBT chip were accomplished and analysed via a detector of transmission electrons.
Detailed record

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